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IRFR/U3418PbF
Static @ T J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V (BR)DSS
Drain-to-Source Breakdown Voltage
80
–––
–––
V
V GS = 0V, I D = 250μA
? V (BR)DSS / ? T J
Breakdown Voltage Temp. Coefficient
–––
0.08
–––
V/°C Reference to 25°C, I D = 1mA
R DS(on)
V GS(th)
I DSS
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
–––
3.5
–––
11.5
–––
–––
14
5.5
1.0
m ?
V
μA
V GS = 10V, I D = 18A
V DS = V GS , I D = 250μA
V DS = 80V, V GS = 0V
–––
–––
250
V DS = 64V, V GS = 0V, T J = 150°C
I GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
–––
–––
100
-100
nA
V GS = 20V
V GS = -20V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
C iss
C oss
C rss
C oss
C oss
C oss eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
66
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
63
23
23
24
72
41
27
3510
330
190
1220
240
360
–––
94
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
nC
ns
pF
V DS = 25V, I D = 18A
I D = 18A
V DS = 40V
V GS = 10V
V DD = 40V
I D = 18A
R G = 6.8 ?
V GS = 10V
V GS = 0V
V DS = 25V
? = 1.0MHz
V GS = 0V, V DS = 1.0V, ? = 1.0MHz
V GS = 0V, V DS = 64V, ? = 1.0MHz
V GS = 0V, V DS = 0V to 64V
Avalanche Characteristics
Parameter
Typ.
Max.
Units
E AS
I AR
Single Pulse Avalanche Energy
Avalanche Current
–––
–––
260
18
mJ
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
Continuous Source Current
–––
–––
70
A
MOSFET symbol
D
(Body Diode)
showing the
I SM
Pulsed Source Current
–––
–––
280
integral reverse
G
(Body Diode)
p-n junction diode.
S
V SD
t rr
Q rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
57
130
1.3
–––
–––
V
ns
nC
T J = 25°C, I S = 18A, V GS = 0V
T J = 150°C, I F = 18A, V DD = 25V
di/dt = 100A/μs
t on
2
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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